Influence of Ultraviolet Radiation Exposure Time on Styrene-Ethylene-Butadiene-Styrene (SEBS) Copolymer

In the article «Influence of Ultraviolet Radiation Exposure Time on Styrene-Ethylene-Butadiene-Styrene (SEBS) Copolymer» Daniel Garcia-Garcia , José Enrique Crespo-Amorós, Francisco Parres and María Dolores Samper describe how they studied the effect of ultraviolet radiation on styrene-ethylene-butadiene-styrene (SEBS) at different exposure times in order to obtain a better understanding of the mechanism of ageing.*

The results obtained for the SEBS, in relation to the duration of exposure, showed superficial changes that cause a decrease in the surface energy (s) and, therefore, a decrease in surface roughness. This led to a reduction in mechanical performance, decreasing the tensile strength by about 50% for exposure times of around 200 hours.*

NanoWorld Pointprobe® NCH AFM probes were used in the Atomic force microscopy (AFM) applied to determine the surface topography and roughness of the aged samples.

Figure 4 from «Influence of Ultraviolet Radiation Exposure Time on Styrene-Ethylene-Butadiene-Styrene (SEBS) Copolymer» by Daniel Garcia-Garcia et al.:
Atomic force microscopy (AFM) surface of SEBS: (a) without exposure (T0), (b) UV exposure T2, (c) UV exposure T7 and (d) UV exposure T9.


Figure 4 from «Influence of Ultraviolet Radiation Exposure Time on Styrene-Ethylene-Butadiene-Styrene (SEBS) Copolymer» by Daniel Garcia-Garcia et al.:
Atomic force microscopy (AFM) surface of SEBS: (a) without exposure (T0), (b) UV exposure T2, (c) UV exposure T7 and (d) UV exposure T9.

*Daniel Garcia-Garcia , José Enrique Crespo-Amorós, Francisco Parres and María Dolores Samper
Influence of Ultraviolet Radiation Exposure Time on Styrene-Ethylene-Butadiene-Styrene (SEBS) Copolymer
Polymers 2020, 12, 862
DOI: https://doi.org/10.3390/polym12040862

Please follow this external link to read the full article: https://www.mdpi.com/2073-4360/12/4/862

Open Access : The article “Influence of Ultraviolet Radiation Exposure Time on Styrene-Ethylene-Butadiene-Styrene (SEBS) Copolymer» byDaniel Garcia-Garcia , José Enrique Crespo-Amorós, Francisco Parres and María Dolores Samper is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly

Ferroelectric memories are endowed with high data storage density by nanostructure designing, while the robustness is also impaired. For organic ferroelectrics favored by flexible memories, low Curie transition temperature limits their thermal stability.*

In their article “Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly “ Mengfan Guo, Jianyong Jiang, Jianfeng Qian, Chen Liu, Jing Ma, Ce‐Wen Nan and Yang Shen demonstrate that a ferroelectric random access memory ( FeRAM ) with high thermal stability and data storage density of ≈60 GB inch−2 could be achieved from an array of edge‐on nano‐lamellae by low‐temperature self‐assembly of P(VDF‐TrFE).*

The self‐assembled P(VDF‐TrFE) described in the article exhibits high storage density of 60 GB inch−2 as a prototype of flexible FeRAM. The authors experimentally determine the self‐assembled FeRAM stored data more robustly, with temperature endurance enhanced over 10 °C and reliable thermal cycling ability. The article shows a novel path to address the thermal stability issues in organic FeRAMs and presents a detailed analysis about the origin of enhanced performance in aligned P(VDF‐TrFE). *

NanoWorld Arrow-CONTPt AFM probes with a conducting Pt/Ir coating were used for the Piezoresponse Force Microscopy ( PFM ) measurements described in this article.

Figure 4 from “Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly” by Mengfan Guo et al.:
Enhanced thermal stability in SA P(VDF‐TrFE). a–c) PFM images of data stored in self‐assembled film at a) 25 °C and b) 90 °C, as well as c) numeric figure of residual area of reversal domains as a function of elevated temperature in a SA film (blue) and a NSA film (red). d) Numeric figure of residual area of reversal domains as a function of thermal cycles in a SA film (blue) and a NSA film (red). Scale bars: 200 nm.

*Mengfan Guo, Jianyong Jiang, Jianfeng Qian, Chen Liu, Jing Ma, Ce‐Wen Nan, Yang Shen
Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly
Advanced Science, Volume6, Issue6, March 20, 2019, 1801931
DOI: https://doi.org/10.1002/advs.201801931

Please follow this external link to read the full article: https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201801931

Open Access: The article « Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly » by Mengfan Guo, Jianyong Jiang, Jianfeng Qian, Chen Liu, Jing Ma, Ce‐Wen Nan and Yang Shen is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

Ultra-high resolution imaging of thin films and single strands of polythiophene using atomic force microscopy

Real-space images of polymers with sub-molecular resolution could provide valuable insights into the relationship between morphology and functionality of polymer optoelectronic devices, but their acquisition is problematic due to perceived limitations in atomic force microscopy (AFM).*

In the article “Ultra-high resolution imaging of thin films and single strands of polythiophene using atomic force microscopy” Vladimir V. Korolkov, Alex Summerfield, Alanna Murphy, David B. Amabilino, Kenji Watanabe, Takashi Taniguchi and Peter H. Beton show that individual thiophene units and the lattice of semicrystalline spin-coated films of polythiophenes (PTs) may be resolved using AFM under ambient conditions through the low-amplitude (≤ 1 nm) excitation of higher eigenmodes of a cantilever.*

They authors demonstrate that the use of higher eigenmodes in tapping-mode ambient AFM can be successfully employed to characterize both individual polymer strands down to a single-atom level and also the ordering of a semi-crystalline polymer with technological relevance. The combination of AFM and solution deposition provides a simple and high-resolution approach to characterizing the structure of polymers.*

The use of NanoWorld Arrow-UHF high frequency AFM probes at their first eigenmode of ~1.4 MHz is mentioned.*


Figure 1a from “Ultra-high resolution imaging of thin films and single strands of polythiophene using atomic force microscopy” by V. Korolkov et al.: High-resolution AFM images of P3DT adsorbed on the surface of hBN. a An overview height scan of P3DT assembled on hBN, scan rate 6.51 Hz, 1024 × 1024 px; inset shows lattice frequency shift image of hBN acquired in FM-AFM tapping mode, scan rate 39 Hz, 512 × 512 px; both images were acquired with the same Arrow UHF probe oscillating at fundamental frequency of 1.42 MHz.

*Vladimir V. Korolkov, Alex Summerfield, Alanna Murphy, David B. Amabilino, Kenji Watanabe, Takashi Taniguchi and Peter H. Beton
Ultra-high resolution imaging of thin films and single strands of polythiophene using atomic force microscopy
Nature Communications, volume 10, Article number: 1537 (2019)
doi: https://doi.org/10.1038/s41467-019-09571-6

Please follow this external link to read the full article: https://rdcu.be/bLSdL

Open Access: The article « Ultra-high resolution imaging of thin films and single strands of polythiophene using atomic force microscopy » by Vladimir V. Korolkov, Alex Summerfield, Alanna Murphy, David B. Amabilino, Kenji Watanabe, Takashi Taniguchi and Peter H. Beton is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.