materials science

Manipulating hyperbolic transient plasmons in a layered semiconductor

Anisotropic materials with oppositely signed dielectric tensors support hyperbolic polaritons, displaying enhanced electromagnetic localization and directional energy flow. *

However, the most reported hyperbolic phonon polaritons are difficult to apply for active electro-optical modulations and optoelectronic devices. *

In the nature communications letter “Manipulating hyperbolic transient plasmons in a layered semiconductor”, Rao Fu, Yusong Qu, Mengfei Xue, Xinghui Liu, Shengyao Chen, Yongqian Zhao, Runkun Chen, Boxuan Li, Hongming Weng, Qian Liu, Qing Dai and Jianing Chen report a dynamic topological plasmonic dispersion transition in black phosphorus (BP) via photo-induced carrier injection, i.e., transforming the iso-frequency contour from a pristine ellipsoid to a non-equilibrium hyperboloid. *

They introduce a promising approach to optically manipulate robust transient hyperbolic plasmons in the layered semiconductor black phosphorus using a dedicated ultrafast nanoscopy scheme. Optical pumping allows the BP’s IFCs to topologically transit from the pristine ellipsoid to the non-equilibrium hyperboloid, exhibiting exotic non-equilibrium hyperbolic plasmon properties, such as the optically tunable plasmonic dispersion and the coexistence of different transient plasmonic modes. *

Their work also demonstrates the peculiar transient plasmonic properties of the studied layered semiconductor, such as the ultrafast transition, low propagation losses, efficient optical emission from the black phosphorus’s edges, and the characterization of different transient plasmon modes. *

The results that Rao Fu et al. present may be relevant for the development of future optoelectronic applications. *

NanoWorld® ARROW-NCPt AFM probes with a Pt/Ir coating were used for the characterization with ultrafast nanoscopy. The pump and probe pulses were spatially overlapped on the Platinum/Iridium coated Arrow probe through a parabolic mirror of a commercial scattering-type scanning near-field optical microscope. *

Fig. 4 from Rao Fu et al. “Manipulating hyperbolic transient plasmons in a layered semiconductor”:Dynamic analysis of the transient plasmons. a Normalized near-field amplitude s3/s3,Si of a 280-nm-thick BP slab for twelve delay times τ. Scale bar, 1 µm. b Near-field amplitude curves for the corresponding twelve different delay times τ in a. c Dynamics of the relative near-field intensity of the first (∆S1) and the second bright strip (∆S2) in b. Opened circles are the experimental data, and solid lines are bi-exponential fitting for ∆S1 and exponential fitting for ∆S2, respectively. d Dynamics of the near-field amplitude s3 from the black circle in a. The inset displays the s3 at τ = −2 to 6 ps, and the dashed line marks the s3 level of the pristine state. NanoWorld® ARROW-NCPt AFM probes with a Pt/Ir coating were used for the characterization with ultrafast nanoscopy. The pump and probe pulses were spatially overlapped on the Pt/Ir coated Arrow probe through a parabolic mirror of a commercial scattering-type scanning near-field optical microscope. — Fig. 4 from Rao Fu et al. “Manipulating hyperbolic transient plasmons in a layered semiconductor”:
Dynamic analysis of the transient plasmons.
a Normalized near-field amplitude s3/s3,Si of a 280-nm-thick BP slab for twelve delay times τ. Scale bar, 1 µm. b Near-field amplitude curves for the corresponding twelve different delay times τ in a. c Dynamics of the relative near-field intensity of the first (∆S1) and the second bright strip (∆S2) in b. Opened circles are the experimental data, and solid lines are bi-exponential fitting for ∆S1 and exponential fitting for ∆S2, respectively. d Dynamics of the near-field amplitude s3 from the black circle in a. The inset displays the s3 at τ = −2 to 6 ps, and the dashed line marks the s3 level of the pristine state.

*Rao Fu, Yusong Qu, Mengfei Xue, Xinghui Liu, Shengyao Chen, Yongqian Zhao, Runkun Chen, Boxuan Li, Hongming Weng, Qian Liu, Qing Dai and Jianing Chen
Manipulating hyperbolic transient plasmons in a layered semiconductor
Nature Communications volume 15, Article number: 709 (2024)
DOI: https://doi.org/10.1038/s41467-024-44971-3

Please follow this external link to read the full article: https://rdcu.be/dBD85

The article “Manipulating hyperbolic transient plasmons in a layered semiconductor” by Rao Fu, Yusong Qu, Mengfei Xue, Xinghui Liu, Shengyao Chen, Yongqian Zhao, Runkun Chen, Boxuan Li, Hongming Weng, Qian Liu, Qing Dai and Jianing Chen is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third-party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.

NanoWorld at MRS Fall Meeting & Exhibit 2023 this week

NanoWorld CEO Manfred Detterbeck is in Boston for the MRS Fall 2023 Meeting & Exhibit this week. Will you be there too? You’ll meet him at some of the sessions or at NanoAndMore USA booth no. 904.

NanoWorld AFM probes CEO Manfred Detterbeck pointing at the MRS Fall 2023 Meeting & Exhibit sign. — NanoWorld AG CEO Manfred Detterbeck at MRS Fall 2023

C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications

In the search for lead-free, Si-microfabrication-compatible piezoelectric materials, thin films of scandium-doped aluminum nitride (Al,Sc)N are of great interest for use in actuators, energy harvesting, and micro-electromechanical-systems (MEMS).*

While the piezoelectric response of AlN increases upon doping with Sc, difficulties are encountered during film preparation because, as bulk solids with completely different structures and large differences in cation radii, ScN (rock salt, cubic) and AlN (wurtzite, hexagonal) are immiscible. *

Consequently, (Al,Sc)N is inherently thermodynamically unstable and prone to phase segregation. Film preparation is further complicated by the technological requirement for polar [001] or [00 1̲] out-of-plane texture, which is achieved using a seeding layer.*

In the article “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications” Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre propose a protocol for successfully depositing [001] textured, 2–3 µm thick films of Al0.75Sc0.25N.*

The procedure relies on the fact that sputtered Ti is [001]-textured α-phase (hcp). Diffusion of nitrogen ions into the α-Ti film during reactive sputtering of Al0.75,Sc0.25N likely forms a [111]-oriented TiN intermediate layer. The lattice mismatch of this very thin film with Al0.75Sc0.25N is ~3.7%, providing excellent conditions for epitaxial growth. In contrast to earlier reports, the Al0.75Sc0.25N films prepared in the current study are Al-terminated. Low growth stress (<100 MPa) allows films up to 3 µm thick to be deposited without loss of orientation or decrease in piezoelectric coefficient. *

An advantage of the proposed technique is that it is compatible with a variety of substrates commonly used for actuators or MEMS, as demonstrated here for both Si wafers and D263 borosilicate glass. Additionally, thicker films can potentially lead to increased piezoelectric stress/strain by supporting application of higher voltage, but without increase in the magnitude of the electric field. *

SEM, AFM, EDS, XRD and XPS techniques were used for the film characterization. For the nanoscale topography maps with atomic force microscopy (AFM) NanoWorld Pyrex-Nitride series PNP-TRS silicon nitride AFM probes were used in peak-force tapping^1® mode. *

Figure 3 from Asaf Cohen et al. “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications”: AFM images of (a) a (100) silicon wafer following cleaning procedures as described in the Materials and Methods section; (b) 50 nm-thick Ti film deposited on the wafer at 300 K; (c) the same film following exposure to N2 plasma at 673 K for 30 min. For the nanoscale topography maps with atomic force microscopy (AFM) NanoWorld Pyrex-Nitride PNP-TRS AFM probes were used in peak-force tapping mode1. * — Figure 3 from Asaf Cohen et al. “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications”: AFM images of (a) a (100) silicon wafer following cleaning procedures as described in the Materials and Methods section; (b) 50 nm-thick Ti film deposited on the wafer at 300 K; (c) the same film following exposure to N2 plasma at 673 K for 30 min.

*Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre
C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications
Sensors 2022, 22, 7041
DOI: https://doi.org/10.3390/s22187041

The article “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications” by Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third-party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.

¹Peak Force Tapping® is a registered trademark of Bruker Corporation.