Ferroelectric memories are endowed with high data storage density by nanostructure designing, while the robustness is also impaired. For organic ferroelectrics favored by flexible memories, low Curie transition temperature limits their thermal stability.*
In their article “Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly “ Mengfan Guo, Jianyong Jiang, Jianfeng Qian, Chen Liu, Jing Ma, Ce‐Wen Nan and Yang Shen demonstrate that a ferroelectric random access memory ( FeRAM ) with high thermal stability and data storage density of ≈60 GB inch−2 could be achieved from an array of edge‐on nano‐lamellae by low‐temperature self‐assembly of P(VDF‐TrFE).*
The self‐assembled P(VDF‐TrFE) described in the article exhibits high storage density of 60 GB inch−2 as a prototype of flexible FeRAM. The authors experimentally determine the self‐assembled FeRAM stored data more robustly, with temperature endurance enhanced over 10 °C and reliable thermal cycling ability. The article shows a novel path to address the thermal stability issues in organic FeRAMs and presents a detailed analysis about the origin of enhanced performance in aligned P(VDF‐TrFE). *
NanoWorld Arrow-CONTPt AFM probes with a conducting Pt/Ir coating were used for the Piezoresponse Force Microscopy ( PFM ) measurements described in this article.
*Mengfan Guo, Jianyong Jiang, Jianfeng Qian, Chen Liu, Jing Ma, Ce‐Wen Nan, Yang Shen
Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly
Advanced Science, Volume6, Issue6, March 20, 2019, 1801931
Please follow this external link to read the full article: https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201801931
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