Tag: s-SNOM

Manipulating hyperbolic transient plasmons in a layered semiconductor

Anisotropic materials with oppositely signed dielectric tensors support hyperbolic polaritons, displaying enhanced electromagnetic localization and directional energy flow. *

However, the most reported hyperbolic phonon polaritons are difficult to apply for active electro-optical modulations and optoelectronic devices. *

In the nature communications letter “Manipulating hyperbolic transient plasmons in a layered semiconductor”, Rao Fu, Yusong Qu, Mengfei Xue, Xinghui Liu, Shengyao Chen, Yongqian Zhao, Runkun Chen, Boxuan Li, Hongming Weng, Qian Liu, Qing Dai and Jianing Chen report a dynamic topological plasmonic dispersion transition in black phosphorus (BP) via photo-induced carrier injection, i.e., transforming the iso-frequency contour from a pristine ellipsoid to a non-equilibrium hyperboloid. *

They introduce a promising approach to optically manipulate robust transient hyperbolic plasmons in the layered semiconductor black phosphorus using a dedicated ultrafast nanoscopy scheme. Optical pumping allows the BP’s IFCs to topologically transit from the pristine ellipsoid to the non-equilibrium hyperboloid, exhibiting exotic non-equilibrium hyperbolic plasmon properties, such as the optically tunable plasmonic dispersion and the coexistence of different transient plasmonic modes. *

Their work also demonstrates the peculiar transient plasmonic properties of the studied layered semiconductor, such as the ultrafast transition, low propagation losses, efficient optical emission from the black phosphorus’s edges, and the characterization of different transient plasmon modes. *

The results that Rao Fu et al. present may be relevant for the development of future optoelectronic applications. *

NanoWorld® ARROW-NCPt AFM probes with a Pt/Ir coating were used for the characterization with ultrafast nanoscopy. The pump and probe pulses were spatially overlapped on the Platinum/Iridium coated Arrow probe through a parabolic mirror of a commercial scattering-type scanning near-field optical microscope. *

Fig. 4 from Rao Fu et al. “Manipulating hyperbolic transient plasmons in a layered semiconductor”:Dynamic analysis of the transient plasmons. a Normalized near-field amplitude s3/s3,Si of a 280-nm-thick BP slab for twelve delay times τ. Scale bar, 1 µm. b Near-field amplitude curves for the corresponding twelve different delay times τ in a. c Dynamics of the relative near-field intensity of the first (∆S1) and the second bright strip (∆S2) in b. Opened circles are the experimental data, and solid lines are bi-exponential fitting for ∆S1 and exponential fitting for ∆S2, respectively. d Dynamics of the near-field amplitude s3 from the black circle in a. The inset displays the s3 at τ = −2 to 6 ps, and the dashed line marks the s3 level of the pristine state. NanoWorld® ARROW-NCPt AFM probes with a Pt/Ir coating were used for the characterization with ultrafast nanoscopy. The pump and probe pulses were spatially overlapped on the Pt/Ir coated Arrow probe through a parabolic mirror of a commercial scattering-type scanning near-field optical microscope.
Fig. 4 from Rao Fu et al. “Manipulating hyperbolic transient plasmons in a layered semiconductor”:
Dynamic analysis of the transient plasmons.
a Normalized near-field amplitude s3/s3,Si of a 280-nm-thick BP slab for twelve delay times τ. Scale bar, 1 µm. b Near-field amplitude curves for the corresponding twelve different delay times τ in a. c Dynamics of the relative near-field intensity of the first (∆S1) and the second bright strip (∆S2) in b. Opened circles are the experimental data, and solid lines are bi-exponential fitting for ∆S1 and exponential fitting for ∆S2, respectively. d Dynamics of the near-field amplitude s3 from the black circle in a. The inset displays the s3 at τ = −2 to 6 ps, and the dashed line marks the s3 level of the pristine state.

*Rao Fu, Yusong Qu, Mengfei Xue, Xinghui Liu, Shengyao Chen, Yongqian Zhao, Runkun Chen, Boxuan Li, Hongming Weng, Qian Liu, Qing Dai and Jianing Chen
Manipulating hyperbolic transient plasmons in a layered semiconductor
Nature Communications volume 15, Article number: 709 (2024)
DOI: https://doi.org/10.1038/s41467-024-44971-3

Please follow this external link to read the full article: https://rdcu.be/dBD85

The article “Manipulating hyperbolic transient plasmons in a layered semiconductor” by Rao Fu, Yusong Qu, Mengfei Xue, Xinghui Liu, Shengyao Chen, Yongqian Zhao, Runkun Chen, Boxuan Li, Hongming Weng, Qian Liu, Qing Dai and Jianing Chen is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third-party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.

Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy

Organic-inorganic halide perovskites are materials of high interest for the development of solar cells.

Learning more about the relationship between the electrical properties and the chemical compositions of perovskite at the nanoscale can help to understand how the interrelations of both can affect device performance and contribute to an understanding on how to best design perovskite active layer structures.*

For the article “Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy” Ting-Xiao Qin, En-Ming You, Mao-Xin Zhang, Peng Zheng, Xiao-Feng Huang, Song-Yuan Ding, Bing-Wei Mao and Zhong-Qun Tian used correlative infrared-spectroscopic nanoimaging ( IR-spectroscopy ) by scattering-type scanning near-field optical microscopy ( s-SNOM ) and Kelvin probe force microscopy ( KPFM ) to contribute to the discussion whether nanometer-sized grain boundaries (GBs) in polycrystalline perovskite films play a positive or negative role in solar cell performance.*

The integrated KPFM and s-SNOM measurements were performed by the authors to acquire the surface potential and infrared near-field image simultaneously through a single-pass scan and thereby learn more about the relationships between the electrical properties and spectral information at the grain boundaries of the investigated material ( polycrystalline CH3NH3Pbl3 perovskite films ).*

The results of the correlated s-SNOM and KPFM imaging presented in the article show that the electron accumulations are enhanced at the grain boundaries (GBs) of the investigated polycrystalline perovskite film, particularly under light illumination which would assist in electron-hole separation and therefore would be a positive influence on the performance of the solar cell.*

NanoWorld conductive platinum-iridium coated Arrow AFM probes ( Arrow-NCPt ) were used to perform the s-SNOM IR imaging.

Figure 4 from “Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy” by Ting-Xiao Qin et al. Correlative KPFM and s-SNOM nanoimaging on perovskite. a AFM topography (1 μm × 1 μm); b Contact potential difference (CPD); and c simultaneously acquired infrared near-field image; d one-dimensional line profiles of the topography, CPD and infrared near-field amplitude along the white dashed lines marked in a–c. The scale bars are 200 nm. NanoWorld Arrow-NCPt AFM probes were used to perform the s-SNOM IR imaging
Figure 4 from “Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy” by Ting-Xiao Qin  et al.
Correlative KPFM and s-SNOM nanoimaging on perovskite.
a AFM topography (1 μm × 1 μm); b Contact potential difference (CPD); and c simultaneously acquired infrared near-field image; d one-dimensional line profiles of the topography, CPD and infrared near-field amplitude along the white dashed lines marked in a–c. The scale bars are 200 nm.

*Ting-Xiao Qin, En-Ming You, Mao-Xin Zhang, Peng Zheng, Xiao-Feng Huang, Song-Yuan Ding, Bing-Wei Mao and Zhong-Qun Tian
Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy
Light: Science & Applications volume 10, Article number: 84 (2021)
DOI: https://doi.org/10.1038/s41377-021-00524-7

Please follow the external link to read the whole article: https://rdcu.be/clg7f

Open Access : The article “Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy” by Ting-Xiao Qin, En-Ming You, Mao-Xin Zhang, Peng Zheng, Xiao-Feng Huang, Song-Yuan Ding, Bing-Wei Mao and Zhong-Qun Tian is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.

Chemical switching of low-loss phonon polaritons in α-MoO3 by hydrogen intercalation

Phonon polaritons (PhPs) have attracted significant interest in the nano-optics communities because of their nanoscale confinement and long lifetimes. Although PhP modification by changing the local dielectric environment has been reported, controlled manipulation of PhPs by direct modification of the polaritonic material itself has remained elusive.*

In the article “Chemical switching of low-loss phonon polaritons in α-MoO3 by hydrogen intercalation” Yingjie Wu, Qingdong Ou, Yuefeng Yin, Yun Li, Weiliang Ma, Wenzhi Yu, Guanyu Liu, Xiaoqiang Cui, Xiaozhi Bao, Jiahua Duan, Gonzalo Álvarez-Pérez, Zhigao Dai, Babar Shabbir, Nikhil Medhekar, Xiangping Li, Chang-Ming Li, Pablo Alonso-González and Qiaoliang Bao demonstrate an effective chemical approach to manipulate PhPs in α-MoO3 by the hydrogen intercalation-induced perturbation of lattice vibrations.*

Their methodology establishes a proof of concept for chemically manipulating polaritons, offering opportunities for the growing nanophotonics community.*

The surface topography and near-field images presented in this article were captured using a commercial s-SNOM setup with a platinum iridium coated NanoWorld Arrow-NCPt AFM probe in tapping mode.*

Fig. 2 a) from “Chemical switching of low-loss phonon polaritons in α-MoO3 by hydrogen intercalation” by Yingjie Wu et al. : Reversible switching of PhPs in the L-RB of α-MoO3 a Schematic of the s-SNOM measurement and PhP propagation in a typical H-MoO3/α-MoO3 in-plane heterostructure. 2 a Schematic of the s-SNOM measurement and PhP propagation in a typical H-MoO3/α-MoO3 in-plane heterostructure. P
Fig. 2 a) from “Chemical switching of low-loss phonon polaritons in α-MoO3 by hydrogen intercalation” by Yingjie Wu et al. :
Reversible switching of PhPs in the L-RB of α-MoO3 a Schematic of the s-SNOM measurement and PhP propagation in a typical H-MoO3/α-MoO3 in-plane heterostructure.
2 a Schematic of the s-SNOM measurement and PhP propagation in a typical H-MoO3/α-MoO3 in-plane heterostructure. Please follow this external link for the full figure: https://www.nature.com/articles/s41467-020-16459-3/figures/2

*Yingjie Wu, Qingdong Ou, Yuefeng Yin, Yun Li, Weiliang Ma, Wenzhi Yu, Guanyu Liu, Xiaoqiang Cui, Xiaozhi Bao, Jiahua Duan, Gonzalo Álvarez-Pérez, Zhigao Dai, Babar Shabbir, Nikhil Medhekar, Xiangping Li, Chang-Ming Li, Pablo Alonso-González & Qiaoliang Bao
Chemical switching of low-loss phonon polaritons in α-MoO3 by hydrogen intercalation
Nature Communications volume 11, Article number: 2646 (2020)
DOI: https://doi.org/10.1038/s41467-020-16459-3

Please follow this external link to read the full article https://rdcu.be/b46eT

Open Access The article “ Chemical switching of low-loss phonon polaritons in α-MoO3 by hydrogen intercalation “ by Yingjie Wu, Qingdong Ou, Yuefeng Yin, Yun Li, Weiliang Ma, Wenzhi Yu, Guanyu Liu, Xiaoqiang Cui, Xiaozhi Bao, Jiahua Duan, Gonzalo Álvarez-Pérez, Zhigao Dai, Babar Shabbir, Nikhil Medhekar, Xiangping Li, Chang-Ming Li, Pablo Alonso-González and Qiaoliang Bao is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.