KPFM surface photovoltage measurement and numerical simulation

Kelvin Probe Force Microscopy ( KPFM ) is a scanning probe microscopy technique. It is a combination of the Kelvin probe and of Atomic Force Microscopy methods. The technique consists in evaluating the difference in work function between two conducting materials, by using a nanometer scale tip ( the “KPFMtip”), and placing it close to the material to be characterised, where a difference in work function leads to an electrostatic force developing between the two, which is translated as an oscillation of the tip’s cantilever. A bia sapplied via an external circuit is varied until the force and hence the electrostatic field between sample and KPFM tip is cancelled.*

In the article “KPFM surface photovoltage measurement and numerical simulation” Clément Marchat, James P. Connolly, Jean-Paul Kleider, José Alvarez, Lejo J. Koduvelikulathu and Jean Baptiste Puel present a method for the analysis of Kelvin probe force microscopy (KPFM) characterization of semiconductor devices.
It enables evaluation of the influence of defective surface layers. The model is validated by analysing experimental KPFM measurements on crystalline silicon samples of contact potential difference (VCPD) in the dark and under illumination, and hence the surface photovoltage (SPV). It is shown that the model phenomenologically explains the observed KPFM measurements. It reproduces the magnitude of SPV characterization as a function of incident light power in terms of a defect density assuming Gaussian defect distribution in the semiconductor bandgap. This allows an estimation of defect densities in surface layers of semiconductors and therefore increased exploitation of KPFM data.*

The KPFM measurements were performed using NanoWorld ARROW-EFM conductive AFM tips with a PtIr coating.
The tip work function didn’t require calibration because only SPV measurement were performed and studied. Measurements were performed in the KPFM amplitude modulation (AM)mode rather than the frequency modulation (FM) one. The AM mode was chosen because lateral resolution was not a problem on the homogeneous bulk samples studied, allowing focus on the superior surface potential resolution that can be achieved with the AM mode.*

Fig. 1 from “KPFM surface photovoltage measurement and numerical simulation” by Clément Marchat et al:
Kelvin probe force microscopy setup schematic. The conducting cantilever carrying the KPFM tip is scanned over a surface while AC + DC potential is applied. The AC signal is a sinusoid whose frequency matches the mechanical resonance of the cantilever. The four-quadrant detector provides feedback in order to minimise cantilever oscillation by varying the DC signal thereby yielding the sample work function compared to the tip one.

*Clément Marchat, James P. Connolly, Jean-Paul Kleider, José Alvarez, Lejo J. Koduvelikulathu and Jean Baptiste Puel
KPFM surface photovoltage measurement and numerical simulation
EPJ Photovoltaics10, 3 (2019)
DOI: https://doi.org/10.1051/epjpv/2019002

Please follow this external link to read the full article: https://www.epj-pv.org/articles/epjpv/abs/2019/01/pv180014/pv180014.html

Open Access The article “KPFM surface photovoltage measurement and numerical simulation “ by Clément Marchat, James P. Connolly, Jean-Paul Kleider, José Alvarez, Lejo J. Koduvelikulathu and Jean Baptiste Puel is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

Electrical conductivity of silver nanoparticle doped carbon nanofibres measured by CS-AFM

Composite carbon nanofibres (CNFs) are highly interesting materials which are usable in a wide array of applications e.g. electrode materials for biosensors, lithium ion batteries, fuel cells and supercapacitors.*

In their paper “Electrical conductivity of silver nanoparticle doped carbon nanofibres measured by CS-AFM” Wael Ali, Valbone Shabani, Matthias Linke, Sezin Sayin, Beate Gebert, Sedakat Altinpinar, Marcus Hildebrandt, Jochen S. Gutmann and Thomas Mayer-Gall present a study on the electrical properties of composite carbon nanofibres (CNFs) using current-sensitive atomic force microscopy (CS-AFM).*

This technique makes it possible to explore the electrical properties of single fibers and hence derive relationships between the structural features and the electrical properties.
NanoWorld AFM probes with conductive PtIr5 coated silicon tips (force constant 2.8 N m−1, length 240 μm, mean width 35 μm and a thickness of 3 μm, and tip height 10–15 μm) Arrow-EFM were used.*

The results presented in the paper show that the composite CNFs have a higher electrical conductivity than the neat CNFs and both the average diameter of the fibers and the electrical conductivity increase with an increasing AgNP content.*

Fig. 8 from “Electrical conductivity of silver nanoparticle doped carbon nanofibres measured by CS-AFM “ by Wael Ali et al.: CS-AFM analysis of CNFs processed from PAN nanofibres electrospun with different concentrations. Images show the friction and current after both stabilisation (a) and carbonisation (b) processes. The applied bias voltage was +0.15 V. The scan area was 5 × 5 μm2 with a scale bar of 1 μm.

Fig. 8 from “Electrical conductivity of silver nanoparticle doped carbon nanofibres measured by CS-AFM “ by Wael Ali et al.: CS-AFM analysis of CNFs processed from PAN nanofibres electrospun with different concentrations. Images show the friction and current after both stabilisation (a) and carbonisation (b) processes. The applied bias voltage was +0.15 V. The scan area was 5 × 5 μm2 with a scale bar of 1 μm.

*Wael Ali, Valbone Shabani, Matthias Linke, Sezin Sayin, Beate Gebert, Sedakat Altinpinar, Marcus Hildebrandt, Jochen S. Gutmann, Thomas Mayer-Gall
Electrical conductivity of silver nanoparticle doped carbon nanofibres measured by CS-AFM
RSC Adv., 2019, 9, 4553-4562
DOI: 10.1039/C8RA04594A

Please follow this external link to the full article: https://pubs.rsc.org/en/content/articlehtml/2019/ra/c8ra04594a

Open Access: The article “Electrical conductivity of silver nanoparticle doped carbon nanofibres measured by CS-AFM” by Wael Ali, Valbone Shabani, Matthias Linke, Sezin Sayin, Beate Gebert, Sedakat Altinpinar, Marcus Hildebrandt, Jochen S. Gutmann and Thomas Mayer-Gall is licensed under a Creative Commons Attribution 3.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. To view a copy of this license, visit https://creativecommons.org/licenses/by/3.0/.

Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films

Read how Nanoworld Arrow-EFM AFM probes were used in the paper “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” in which the authors Zhen Zhou, Wie Sun, Zhenyu Liao, Shuai Ning, Jing Zhu and Jing-Feng Li:

  • prepared 12% Sm-doped BiFeO3 epitaxial thin films on Nb-doped SrTiO3 (001) substrate via a sol-gel method
  • used PFM (piezoresponse force microscopy) to characterize the in-situ ferroelectric domain evolution from room temperature to 200 °C
  • illustrated a phase transition from ferroelectric to antiferroelectric phase by SS-PFM and found a significant piezoelectric response at the phase boundary

Their work revealed the origin of the high piezoresponse of Sm-doped BiFeO3 thin films at the morphotropic phase boundary (MPB).*

A PtIr-coated NanoWorld Arrow-EFM cantilever with a nominal spring constant of 2.8 N/m and a typical resonant frequency of 75 kHz was used in all imaging modes mentioned in the article.

Figure 3 from “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” by Zhen Zhou et al. : PFM scanning results of the sample at 20 °C, 80 °C, 140 °C and 200 °C, (a)-(d) out-of-plane phase, (e)-(h) out-of-plane amplitude, (i)-(l) in-plane phase, and (m)-(p) in-plane amplitude. NanoWorld Arrow-EFM AFM probes were used in all imaging modes.
Figure 3 from “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” by Zhen Zhou et al. : PFM scanning results of the sample at 20 °C, 80 °C, 140 °C and 200 °C, (a)-(d) out-of-plane phase, (e)-(h) out-of-plane amplitude, (i)-(l) in-plane phase, and (m)-(p) in-plane amplitude.

 
 
 
 
 
 
             
*Zhen Zhou, Wie Sun, Zhenyu Liao, Shuai Ning, Jing Zhu, Jing-Feng Li
Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films

Journal of Materiomics, Volume 4, Issue 1, March 2018, Pages 27-34
DOI: https://doi.org/10.1016/j.jmat.2017.11.002

Please follow this external link if you would like to read the full article: https://www.sciencedirect.com/science/article/pii/S2352847817300631

Open Access The article “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” by Zhen Zhou, Wie Sun, Zhenyu Liao, Shuai Ning, Jing Zhu and Jing-Feng Li is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.