Tag: EFM

Determination of polarization states in (K,Na)NbO3 lead-free piezoelectric crystal

In the article “Determination of polarization states in (K,Na)NbO3lead-free piezoelectric crystal” Mao-Hua Zhang, Chengpeng Hu, Zhen Zhou, Hao Tian, Hao-Cheng Thong, Yi Xuan Liu, Xing-Yu Xu, Xiao-Qing Xi, Jing-Feng Li and Ke Wang describe how polarization switching in lead-free (K0.40Na0.60)NbO3 (KNN) single crystals was studied by switching spectroscopy piezoresponse force microscopy (SS-PFM).*

Acquisition of multiple hysteresis loops on a closely spaced square grid enables polarization switching parameters to be mapped in real space. Piezoresponse amplitude and phase hysteresis loops show collective symmetric/asymmetric characteristics, affording information regarding the switching behavior of different domains. As such, the out-of-plane polarization states of the domains, including amplitudes and phases can be determined.*

The results presented by the authors could contribute to a further understanding of the relationships between polarization switching and polarization vectors at the nanoscale, and provide a feasible method to correlate the polarization hysteresis loops in a domain under an electric field with the polarization vector states.*

PFM and SS-PFM were implemented on a commercial Atomic Force Microscope using NanoWorld PlatinumIridium coated Pointprobe® EFM AFM probes.

Fig. 1 from “Determination of polarization states in (K,Na)NbO3lead-free piezoelectric crystal” by Mao-Hua Zhang et al: PFM imaging and a schematic of tip movement during SS-PFM mapping. (a) Piezoresponse amplitude and (b) phase contrast images of the KNN single crystals. (c) In SS-PFM, local hysteresis loops are collected using a waveform at each pointon 25 × 25 mesh. The domain wall shown in Fig. 1(b) orients along [001]c.
Fig. 1 from “Determination of polarization states in (K,Na)NbO3lead-free piezoelectric crystal” by Mao-Hua Zhang et al:

*Mao-Hua Zhang, Chengpeng Hu, Zhen Zhou, Hao Tian, Hao-Cheng Thong, Yi Xuan Liu, Xing-Yu Xu, Xiao-Qing Xi, Jing-Feng Li, Ke Wang
Determination of polarization states in (K,Na)NbO3lead-free piezoelectric crystal
Journal of Advanced Ceramics2020, 9(2): 204–209
DOI: https://doi.org/10.1007/s40145-020-0360-2

Please follow this external link to read the full article: https://link.springer.com/content/pdf/10.1007/s40145-020-0360-2.pdf

Open Access The article “Determination of polarization states in (K,Na)NbO3lead-free piezoelectric crystal” Mao-Hua Zhang, Chengpeng Hu, Zhen Zhou, Hao Tian, Hao-Cheng Thong, Yi Xuan Liu, Xing-Yu Xu, Xiao-Qing Xi, Jing-Feng Li and Ke Wang is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter

Nanostructured electrodes and their flexible integrated systems have great potential for many applications, including electrochemical energy storage, electrocatalysis and solid-state memory devices, given their ability to improve faradaic reaction sites by large surface area. Although many processing techniques have been employed to fabricate nanostructured electrodes on to flexible substrates, these present limitations in terms of achieving flexible electrodes with high mechanical stability.*

In the study “Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter” by Seokjung Yun, Sang-Joon Kim, Jaesung Youn, Hoon Kim, Jeongjae Ryu, Changdeuck Bae, Kwangsoo No and Seungbum Hong, the adhesion, mechanical properties and flexibility of TiN nanotube arrays on a Pt substrate were improved using a Ti interlayer. Highly ordered and well aligned TiN nanotube arrays were fabricated on a Pt substrate using a template-assisted method with an anodic aluminum oxide (AAO) template and atomic layer deposition (ALD) system.*

The authors show that with the use of a Ti interlayer between the TiN nanotube arrays and Pt substrate, the TiN nanotube arrays could perfectly attach to the Pt substrate without delamination and faceted phenomena. Furthermore, the I-V curve measurements confirmed that the electric contact between the TiN nanotube arrays and substrate for use as an electrode was excellent, and its flexibility was also good for use in flexible electronic devices. Future efforts will be directed toward the fabrication of embedded electrodes in flexible plastic substrates by employing the concepts demonstrated in this study.*

The presented strategy provides a new class of nanostructured 3D electrodes to overcome critical mechanical stability, thus providing a great potential platform for application in a flexible integrated device.*

Topography and transport properties were investigated using a conductive atomic force microscope with NanoWorld Pointprobe® EFM AFM probes ( Pt-coated conductive AFM tips).*

Figure 5 from “Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter” by Seokjung Yun et al.:
Analysis of TiN NTs/ Ti / Pt samples (a) XRD, (b) schematic of C-AFM setup, (c) AFM height image, and (d) local I-V curve by C-AFM.

*Seokjung Yun, Sang-Joon Kim, Jaesung Youn, Hoon Kim, Jeongjae Ryu, Changdeuck Bae, Kwangsoo No and Seungbum Hong
Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
Nanomaterials 2020, 10, 409
DOI: 10.3390/nano10030409

Please follow this external link for access to the full article: https://doi.org/10.3390/nano10030409

Open Access The article “Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter“ by Seokjung Yun, Sang-Joon Kim, Jaesung Youn, Hoon Kim, Jeongjae Ryu, Changdeuck Bae, Kwangsoo No and Seungbum Hong is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films

Read how Nanoworld Arrow-EFM AFM probes were used in the paper “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” in which the authors Zhen Zhou, Wie Sun, Zhenyu Liao, Shuai Ning, Jing Zhu and Jing-Feng Li:

  • prepared 12% Sm-doped BiFeO3 epitaxial thin films on Nb-doped SrTiO3 (001) substrate via a sol-gel method
  • used PFM (piezoresponse force microscopy) to characterize the in-situ ferroelectric domain evolution from room temperature to 200 °C
  • illustrated a phase transition from ferroelectric to antiferroelectric phase by SS-PFM and found a significant piezoelectric response at the phase boundary

Their work revealed the origin of the high piezoresponse of Sm-doped BiFeO3 thin films at the morphotropic phase boundary (MPB).*

A PtIr-coated NanoWorld Arrow-EFM cantilever with a nominal spring constant of 2.8 N/m and a typical resonant frequency of 75 kHz was used in all imaging modes mentioned in the article.

Figure 3 from “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” by Zhen Zhou et al. : PFM scanning results of the sample at 20 °C, 80 °C, 140 °C and 200 °C, (a)-(d) out-of-plane phase, (e)-(h) out-of-plane amplitude, (i)-(l) in-plane phase, and (m)-(p) in-plane amplitude. NanoWorld Arrow-EFM AFM probes were used in all imaging modes.
Figure 3 from “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” by Zhen Zhou et al. : PFM scanning results of the sample at 20 °C, 80 °C, 140 °C and 200 °C, (a)-(d) out-of-plane phase, (e)-(h) out-of-plane amplitude, (i)-(l) in-plane phase, and (m)-(p) in-plane amplitude.

 
 
 
 
 
 
             
*Zhen Zhou, Wie Sun, Zhenyu Liao, Shuai Ning, Jing Zhu, Jing-Feng Li
Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films

Journal of Materiomics, Volume 4, Issue 1, March 2018, Pages 27-34
DOI: https://doi.org/10.1016/j.jmat.2017.11.002

Please follow this external link if you would like to read the full article: https://www.sciencedirect.com/science/article/pii/S2352847817300631

Open Access The article “Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001) thin films” by Zhen Zhou, Wie Sun, Zhenyu Liao, Shuai Ning, Jing Zhu and Jing-Feng Li is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.